fy ^smi-donauctoi lproducti, one. ?_/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 n-channel enhancement-mode silicon gate tmos power field effect transistor these tmos power fets are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100-c ? designer's data ? irjss. vds(on)< vgs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-dram diode characterized for use with inductive loads d o kt tmos o 5 MTM55N10 mtm60n06 55 and 60 ampere n-channel tmos power fets 100 volts 0.028 ohm w volts (to-204ae) maximum ratings rating drain-source voltage drain-gate voltage (figs = 1 mil) gate-source voltage continuous non-repetitive |tp ? 50 ms) drain current continuous pulsed total power dissipation @ tc = 25c derate above 25' c operating and storage temperature range symbol vdss vdgr vqs vgsm id 'dm pd tj, tstg mtm 60n06 60 60 5bn10 100 100 20 = 40 60 300 55 275 250 2 -65 to 150 unit vdc vdc vdc vpk adc watts wfc "c thermal characteristics thermal resistance junction to case maximum lead temp, for soldering purposes, 1/8" from case for 5 seconds rfljc tl 0.5 300 'cfln 'c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MTM55N10/mtm60n06 electrical characteristics (tc = 25c unless otherwise noted) symbol m*x onrt off charactemstics drain-source breakdown voltage (vgs = 0. id = 5.0 ma' mtm60n06 MTM55N10 zero gate voltage drain current . vds - ves tj = 100c static drain-source on-resistance (vgs ? 10 vdc, id = 30 adc) mtm60n06 (vqs " 10 vdc' 'd = 27-5 adc) mtm56n10 drain-source on-voltage (vqs - 10 v) (id = 60 adc) mtm60n06 do = 30 adc, tj = 100c) mtm60n06 (id = 56 adc) MTM55N10 (id - 27.5 adc, tc - 100c) MTM55N10 forward transconductonce (vds = is v, id = 30 a) mtmbonos (vos " 15 v, id = 27.6 a) MTM55N10 vqs(th) rds(on) vds(on) 8fs 2 1.5 _ ? 10 10 4.6 4 0.028 0.04 1,98 1.68 2.6 22. - vdc ohm vdc mhos dynamic charactemstics input capacitance output capacitance reverse transfer capacitance (vds ~ 25 v, vgs ~ - f = 1 mhz) see figure 8 ^iss cok cras ? ? ? 5000 2500 1000 pf switching characteristics* (tj - 100c) turn-on delay time rise time turn-off delay time fall time total gate charge (vdd = 25 v, id = 0.5 rated ir> rgen = 50 ohms) see figure 16 vds = -8 r??d. id = rated, vgs = 10 v see figure is td(on) tr ?d(off) tf qg qg. qgd ? ? ? ? 105 (typ) 74 (typ) 31 |
